dim400dds12 - a000 dual sw itch igbt module replaces ds5841 - 1.1 ds5841 - 2 november 2009 (ln26744) caution: thi s device is sensitive to electrostatic discharge. users should follow esd handling procedures 1 / 8 www.dynexsemi.com features 10s short circuit withstand high thermal cycling capability non punch through silicon isolated cu base with al 2 o 3 substrates lead free c onstruction applications high reliability inverters motor controllers the powerline range of high power modules includes half bridge, chopper, dual, single and bi - directional switch configu rations covering voltages from 6 00v to 33 00v and currents up to 2400a. the dim 400dds 12 - a 000 is a dual switch 12 00v, n - channel enhancement mode, insulated gate bipolar tra nsistor (igbt) module. the igbt has a wide reverse bias safe operating area (rbsoa) plus 10s short circuit withstand. this device is optimised for traction drives and other applications requiring high thermal cycling capability. the module incorporates a n electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety . ordering information order as: dim 400dds 12 - a000 note: when ordering, please use the c omplete part number key parameters v ces 12 00v v ce(sat) * (typ) 2. 2 v i c (max) 40 0a i c(pk) (max) 8 00a * measured at the power busbars, not the auxiliary terminals fig. 1 circuit configuration outline type code: d (see fig. 11 for fur ther information) fig. 2 package 4 x m8 sc re w ing depth m ax 16 sc re w ing depth m ax 8 6 x m4 6 x o 7 7 ( c ) 1(e) 3( c ) 5 ( e ) 5 ( e ) 6 ( g ) 10 ( e ) 2( c ) 4(e) 12 ( c ) 11 ( g ) 130 0. 5 114 0.1 57 0.2 5 57 0.2 5 124 0. 25 140 0. 5 30 0.2 16 0.2 18 0.2 44 0.2 57 0.2 53 0.2 40 0.2 5 0. 2 29.2 0.5 5.25 0. 3 35 0.2 11.5 0.2 14 0.2 55.2 0. 3 11.85 0.2 38 +1.5 -0.0 28 0.5 20 0.1
dim400dds12 - a000 2 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com absolute maximum ratings stresses above those listed under absolute maximum ratings may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous r upture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25c unless stated otherwise symbol parameter test conditions max. units v ces collector - emitter voltage v ge = 0v 12 00 v v ges gate - emitter voltage 20 v i c continuous collector current t case = 8 5 c 4 00 a i c(pk) peak collector current 1ms, t case = 115 c 8 00 a p max max. transistor power dissipation t case = 25 c , t j = 150 c 3470 w i 2 t diode i 2 t va lue v r = 0, t p = 10ms, t j = 125oc 25 ka 2 s v isol isolation voltage C per module commoned terminals to base plate. ac rms, 1 min, 50hz 25 00 v thermal and mechanical ratings internal insulation material: al 2 o 3 baseplate material: cu creepage distance: 20 mm clearance: 10 mm cti (comparative tracking index): 350 symbol parameter test conditions min typ. max units r th(j - c) thermal resistance C th(j - c) thermal resistan ce C th(c - h) thermal resistance C j junction temperature transistor - - 150 c diode - - 125 c t stg storage temperature range - - 40 - 125 c screw torque mounting C C C
dim400dds12 - a000 caution: thi s device is sensitive to electrostatic discharge. users should follow esd handling procedures 3 / 8 www.dynexsemi.com electrical characteristics t case = 25 c unless stated otherwise. symbol param eter test conditions min typ max units i ces collector cut - off current v ge = 0v, v ce = v ces 0.5 ma v ge = 0v, v ce = v ces , t case = 125 c 12 ma i ges gate leakage current v ge = 20v, v ce = 0v 2 a v ge(th) gate threshold voltage i c = 2 0ma, v ge = v ce 4.5 5.5 6.5 v v ce(sat) ? collector - e mitter saturation voltage v ge = 15v, i c = 4 00a 2. 2 2.8 v v ge = 15v, i c = 4 00a, t j = 125 c 2.6 3.2 v i f diode forward current dc 400 a i fm diode m aximum forward current t p = 1ms 800 a v f ? diode forward voltage i f = 4 00a 2. 1 2. 4 v i f = 4 00a, t j = 125 c 2. 1 2. 4 v c ies input capacitance v ce = 25v, v ge = 0v, f = 1mhz 45 nf q g gate charge 15v 4 c c res reverse transfer capacitance v ce = 25v, v ge = 0v, f = 1mhz nf l m module inductance C per switch 20 nh r int internal transistor resistance C per switch 270 sc data short circuit current, i sc t j = 125 c , v cc = 9 00v t p 10s, v ge 15v v ce (max) = v ces C l * x di/dt iec 60747 - 9 i 1 2750 a i 2 2250 a note: ? me asured at the power busbars, not the auxiliary terminals * l is the circuit inductance + l m
dim400dds12 - a000 4 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com electrical characteristics t case = 25c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 400a v ge = 15v v ce = 6 00v r g(on) = 3.3 r g(off) = 3.3 l s ~ 100 nh 710 n s t f fall time 70 ns e off turn - off energy loss 60 mj t d(on) turn - on delay time 190 ns t r rise time 100 ns e on turn - on energy loss 40 mj q rr diode reverse recovery charge i f = 400a v ce = 6 00v di f /dt = 47 00a/s 55 c i rr diode reverse recovery current 300 a e rec diode reverse recovery energy 17 mj t case = 125c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 400a v ge = 15v v ce = 600v r g(on) = 3.3 r g(off) = 3.3 l s ~ 100 nh 890 n s t f fall time 100 ns e off turn - off energy loss 60 mj t d(on) turn - on delay time 440 ns t r rise time 125 ns e on t urn - on energy loss 60 mj q rr diode reverse recovery charge i f = 4 00a v ce = 6 00v di f /dt = 40 00a/s 85 c i rr diode reverse recovery current 320 a e rec diode reverse recovery energy 32 mj
dim400dds12 - a000 caution: thi s device is sensitive to electrostatic discharge. users should follow esd handling procedures 5 / 8 www.dynexsemi.com fig. 3 typical output characteristics fig. 4 typical output characteristics fig. 5 typical switching energy vs collector current fig. 6 typical switching energy vs gate resistance
dim400dds12 - a000 6 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com fig. 7 diode typical forward characteristics fig. 8 reverse bias safe operating area fig. 9 diode reverse bias safe operating area fig. 10 transient thermal impedance
dim400dds12 - a000 caution: thi s device is sensitive to electrostatic discharge. users should follow esd handling procedures 7 / 8 www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 1450g module outline type code: d fig. 11 module outline d rawing 4 x m8 screwing depth max 16 screwing depth max 8 6 x m4 130 0.5 124 0.25 30 0.2 16 0.2 18 0.2 29.2 0.5 5.25 0.3 14 0.2 5 0.2 57 0.25 57 0.25 114 0.1 40 0.2 44 0.2 53 0.2 57 0.2 11.85 0.2 55.2 0.3 38 +1.5 -0.0 35 0.2 11.5 0.2 7 (c) 1(e) 3(c) 5 (e) 5 (e) 6 (g) 10 (e) 2(c) 4(e) 12 (c) 11 (g) 140 0.5 6 x ? 7
dim400dds12 - a000 8 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com headquarters operations customer service dynex semiconductor ltd doddington road, lincoln lincolnshire, ln6 3lf, united kingdom dynex semiconductor ltd doddington road, lincoln lincolnshire, ln6 3lf, united kingdom fax: +44(0)1522 500550 fax: +44(0)1522 500020 tel: +44(0)1522 500500 tel: +44(0)1522 502901 / 502753 email: power_solutions@dynexsemi.com dynex semiconductor technical documentation C not for resale. pro duced in united kingdom. datasheet annotations: dynex semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but may change. adv ance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification. this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, appli ed or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee expressed or implied is made regarding the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, desig n o r price of any product or service. information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such metho ds of use will be satisfactory in a specific piece of equipment. it is the users responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and ha s not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the companys cond itions of sale, which are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their resp ective owners.
|
